TK55S10N1,LQ Toshiba Semiconductor and Storage MOSFET N-CH 100V 55A DPAK
Дыскрэтныя паўправадніковыя прыборы
Нумар вытворцы:
TK55S10N1,LQ
Вытворца:
Катэгорыя прадукцыі:
Апісанне:
MOSFET N-CH 100V 55A DPAK
Стан RoHs:
Без свінцу / у адпаведнасці з RoHS Табліцы дадзеных:
TK55S10N1,LQ Табліцы дадзеных(PDF)
Rds On (макс.) @ Id, Vgs :
6.5 mOhm @ 27.5A, 10V
Vgs (макс.) :
±20V
Vgs(th) (макс.) @ ідэнтыфікатар :
4V @ 500µA
Зарад варот (Qg) (макс.) @ Vgs :
49nC @ 10V
Напружанне адток да крыніцы (Vdss) :
100V
Напружанне прывада (макс. Rds уключана, мінім. Rds уключана) :
10V
Пакет / Чахол :
TO-252-3, DPak (2 Leads + Tab), SC-63
Пакет прылады пастаўшчыка :
DPAK+
Працоўная тэмпература :
175°C (TJ)
Рассейванне магутнасці (макс.) :
157W (Tc)
серыял :
U-MOSVIII-H
Ток - бесперапынны сліў (Id) пры 25°C :
55A (Ta)
Тып FET :
N-Channel
Тып мацавання :
Surface Mount
Тэхналогія :
MOSFET (Metal Oxide)
Уваходная ёмістасць (Ciss) (макс.) @ Vds :
3280pF @ 10V
Ўпакоўка :
Tape & Reel (TR)
Функцыя FET :
-
Частка Статус :
Active
в наличии
34,249
Unit Price:
Звяжыцеся з намі Прапанова
TK55S10N1,LQ Канкурэнтныя кошты
ChipIc мае унікальную крыніцу паставак. Мы можам прапанаваць TK55S10N1,LQ больш
канкурэнтаздольную цану для нашых кліентаў. Вы можаце атрымаць асалоду ад нашым лепшым
сэрвісам, купіўшы ChipIc TK55S10N1,LQ. Калі ласка, не саромейцеся звяртацца наконт
лепшай цаны на TK55S10N1,LQ. Націсніце, каб атрымаць прапанову
TK55S10N1,LQ Асаблівасці
TK55S10N1,LQ is produced by Toshiba Semiconductor and Storage, belongs to Транзістары - палявыя транзістары, МАП-транзістары - адзіночныя.
TK55S10N1,LQ Падрабязная інфармацыя аб прадукцыі
:
TK55S10N1,LQ - гэта Транзістары - палявыя транзістары, МАП-транзістары - адзіночныя, буферныя ўзмацняльнікі, распрацаваныя і
вырабленыя
Toshiba Semiconductor and Storage.
TK55S10N1,LQ вытворчасці Toshiba Semiconductor and Storage можна набыць на сайце Chipic.
Тут вы можаце знайсці розныя віды электронных дэталяў ад вядучых вытворцаў свету.
TK55S10N1,LQ кампаніі Chipic прайшоў строгі кантроль якасці і адпавядае усім патрабаванням.
Статус запасаў, пазначаны на Chipic, прызначаны толькі для даведкі.
Калі вы не знайшлі запчастку, якую шукаеце, вы можаце звязацца з намі для атрымання дадатковай інфармацыі, такі як колькасць запасаў у табліцы дадзеных TK55S10N1,LQ (PDF), кошт TK55S10N1,LQ, Распіноўка TK55S10N1,LQ, кіраўніцтва TK55S10N1,LQ і рашэнне на замену TK55S10N1,LQ.
TK55S10N1,LQ вытворчасці Toshiba Semiconductor and Storage можна набыць на сайце Chipic.
Тут вы можаце знайсці розныя віды электронных дэталяў ад вядучых вытворцаў свету.
TK55S10N1,LQ кампаніі Chipic прайшоў строгі кантроль якасці і адпавядае усім патрабаванням.
Статус запасаў, пазначаны на Chipic, прызначаны толькі для даведкі.
Калі вы не знайшлі запчастку, якую шукаеце, вы можаце звязацца з намі для атрымання дадатковай інфармацыі, такі як колькасць запасаў у табліцы дадзеных TK55S10N1,LQ (PDF), кошт TK55S10N1,LQ, Распіноўка TK55S10N1,LQ, кіраўніцтва TK55S10N1,LQ і рашэнне на замену TK55S10N1,LQ.
TK55S10N1,LQ FAQ
:
1. What are the key features of the TK55S10N1, LQ discrete semiconductor?
The TK55S10N1, LQ discrete semiconductor features high voltage capability, low on-resistance, and fast switching speed. It is designed for use in power management applications.
2. What is the maximum operating temperature for the TK55S10N1, LQ discrete semiconductor?
The TK55S10N1, LQ discrete semiconductor has a maximum operating temperature of 150°C, making it suitable for a wide range of operating conditions.
3. Can the TK55S10N1, LQ discrete semiconductor be used in automotive applications?
Yes, the TK55S10N1, LQ discrete semiconductor is suitable for automotive applications, offering reliable performance in challenging environments.
4. What is the typical gate charge of the TK55S10N1, LQ discrete semiconductor?
The TK55S10N1, LQ discrete semiconductor typically has a gate charge of 30nC, ensuring efficient and responsive operation.
5. Does the TK55S10N1, LQ discrete semiconductor have built-in protection features?
Yes, the TK55S10N1, LQ discrete semiconductor includes built-in protection against overcurrent, overvoltage, and thermal issues, enhancing its reliability in various applications.
6. What is the recommended mounting torque for the TK55S10N1, LQ discrete semiconductor?
The recommended mounting torque for the TK55S10N1, LQ discrete semiconductor is 0.8 Nm, ensuring secure and reliable installation.
7. Can the TK55S10N1, LQ discrete semiconductor be operated in parallel for higher current applications?
Yes, the TK55S10N1, LQ discrete semiconductor can be operated in parallel to achieve higher current handling capabilities, providing flexibility in design.
8. What is the typical reverse recovery time of the TK55S10N1, LQ discrete semiconductor?
The TK55S10N1, LQ discrete semiconductor typically has a reverse recovery time of 35ns, contributing to efficient and responsive performance in diode applications.
9. Is the TK55S10N1, LQ discrete semiconductor RoHS compliant?
Yes, the TK55S10N1, LQ discrete semiconductor is fully RoHS compliant, meeting environmental regulations and standards.
10. What are the recommended storage conditions for the TK55S10N1, LQ discrete semiconductor?
The TK55S10N1, LQ discrete semiconductor should be stored in a dry environment at temperatures between -55°C and 150°C to maintain its integrity and performance over time.
The TK55S10N1, LQ discrete semiconductor features high voltage capability, low on-resistance, and fast switching speed. It is designed for use in power management applications.
2. What is the maximum operating temperature for the TK55S10N1, LQ discrete semiconductor?
The TK55S10N1, LQ discrete semiconductor has a maximum operating temperature of 150°C, making it suitable for a wide range of operating conditions.
3. Can the TK55S10N1, LQ discrete semiconductor be used in automotive applications?
Yes, the TK55S10N1, LQ discrete semiconductor is suitable for automotive applications, offering reliable performance in challenging environments.
4. What is the typical gate charge of the TK55S10N1, LQ discrete semiconductor?
The TK55S10N1, LQ discrete semiconductor typically has a gate charge of 30nC, ensuring efficient and responsive operation.
5. Does the TK55S10N1, LQ discrete semiconductor have built-in protection features?
Yes, the TK55S10N1, LQ discrete semiconductor includes built-in protection against overcurrent, overvoltage, and thermal issues, enhancing its reliability in various applications.
6. What is the recommended mounting torque for the TK55S10N1, LQ discrete semiconductor?
The recommended mounting torque for the TK55S10N1, LQ discrete semiconductor is 0.8 Nm, ensuring secure and reliable installation.
7. Can the TK55S10N1, LQ discrete semiconductor be operated in parallel for higher current applications?
Yes, the TK55S10N1, LQ discrete semiconductor can be operated in parallel to achieve higher current handling capabilities, providing flexibility in design.
8. What is the typical reverse recovery time of the TK55S10N1, LQ discrete semiconductor?
The TK55S10N1, LQ discrete semiconductor typically has a reverse recovery time of 35ns, contributing to efficient and responsive performance in diode applications.
9. Is the TK55S10N1, LQ discrete semiconductor RoHS compliant?
Yes, the TK55S10N1, LQ discrete semiconductor is fully RoHS compliant, meeting environmental regulations and standards.
10. What are the recommended storage conditions for the TK55S10N1, LQ discrete semiconductor?
The TK55S10N1, LQ discrete semiconductor should be stored in a dry environment at temperatures between -55°C and 150°C to maintain its integrity and performance over time.
TK55S10N1,LQ Змяненні, ключавыя словы
:
TK55S10N1,LQ Кошт
TK55S10N1,LQ Малюнак
TK55S10N1,LQ Напружанне на выснове
Акцыі: Хуткая праверка каціровак
Мінімальная замова: 1
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