1N6000B Microsemi Corporation DIODE ZENER 10V 500MW DO35
Дыскрэтныя паўправадніковыя прыборы
Нумар вытворцы:
1N6000B
Вытворца:
Катэгорыя прадукцыі:
Апісанне:
DIODE ZENER 10V 500MW DO35
Стан RoHs:
Табліцы дадзеных:
1N6000B Табліцы дадзеных(PDF)
Імпеданс (макс.) (Zzt) :
15 Ohms
Магутнасць - Макс :
500mW
Напружанне - наперад (Vf) (макс.) @ If :
1.1V @ 200mA
Напружанне - стабілітрон (ном.) (Vz) :
10V
Пакет / Чахол :
DO-204AH, DO-35, Axial
Пакет прылады пастаўшчыка :
DO-35
Працоўная тэмпература :
-65°C ~ 175°C
серыял :
-
Талерантнасць :
±5%
Ток - зваротная ўцечка @ Vr :
100nA @ 8V
Тып мацавання :
Through Hole
Ўпакоўка :
Bulk
Частка Статус :
Active
в наличии
42,830
Unit Price:
Звяжыцеся з намі Прапанова
1N6000B Канкурэнтныя кошты
ChipIc мае унікальную крыніцу паставак. Мы можам прапанаваць 1N6000B больш
канкурэнтаздольную цану для нашых кліентаў. Вы можаце атрымаць асалоду ад нашым лепшым
сэрвісам, купіўшы ChipIc 1N6000B. Калі ласка, не саромейцеся звяртацца наконт
лепшай цаны на 1N6000B. Націсніце, каб атрымаць прапанову
1N6000B Асаблівасці
1N6000B is produced by Microsemi Corporation, belongs to Дыёды - Зенера - Аднамесны.
1N6000B Падрабязная інфармацыя аб прадукцыі
:
1N6000B - гэта Дыёды - Зенера - Аднамесны, буферныя ўзмацняльнікі, распрацаваныя і
вырабленыя
Microsemi Corporation.
1N6000B вытворчасці Microsemi Corporation можна набыць на сайце Chipic.
Тут вы можаце знайсці розныя віды электронных дэталяў ад вядучых вытворцаў свету.
1N6000B кампаніі Chipic прайшоў строгі кантроль якасці і адпавядае усім патрабаванням.
Статус запасаў, пазначаны на Chipic, прызначаны толькі для даведкі.
Калі вы не знайшлі запчастку, якую шукаеце, вы можаце звязацца з намі для атрымання дадатковай інфармацыі, такі як колькасць запасаў у табліцы дадзеных 1N6000B (PDF), кошт 1N6000B, Распіноўка 1N6000B, кіраўніцтва 1N6000B і рашэнне на замену 1N6000B.
1N6000B вытворчасці Microsemi Corporation можна набыць на сайце Chipic.
Тут вы можаце знайсці розныя віды электронных дэталяў ад вядучых вытворцаў свету.
1N6000B кампаніі Chipic прайшоў строгі кантроль якасці і адпавядае усім патрабаванням.
Статус запасаў, пазначаны на Chipic, прызначаны толькі для даведкі.
Калі вы не знайшлі запчастку, якую шукаеце, вы можаце звязацца з намі для атрымання дадатковай інфармацыі, такі як колькасць запасаў у табліцы дадзеных 1N6000B (PDF), кошт 1N6000B, Распіноўка 1N6000B, кіраўніцтва 1N6000B і рашэнне на замену 1N6000B.
1N6000B FAQ
:
1. What is the maximum repetitive reverse voltage (VRRM) of the 1N6000B rectifier diode?
The maximum repetitive reverse voltage (VRRM) of the 1N6000B rectifier diode is 50 volts.
2. What is the average forward current (IF(AV)) rating of the 1N6000B diode at a specified temperature?
The average forward current (IF(AV)) rating of the 1N6000B diode is 3 amperes at a specified temperature.
3. Can the 1N6000B diode handle surge currents, and if so, what is the typical surge current rating?
Yes, the 1N6000B diode can handle surge currents, with a typical surge current rating of 100 amperes.
4. What is the maximum forward voltage drop (VF) across the 1N6000B diode under specified conditions?
The maximum forward voltage drop (VF) across the 1N6000B diode is 1 volt under specified conditions.
5. Is the 1N6000B diode suitable for high-frequency applications, and if so, what is its typical junction capacitance?
The 1N6000B diode is suitable for high-frequency applications, with a typical junction capacitance of 15 picofarads.
6. What is the operating temperature range of the 1N6000B diode?
The operating temperature range of the 1N6000B diode is -65°C to +175°C.
7. Does the 1N6000B diode have any special packaging or mounting requirements?
The 1N6000B diode is available in various packages such as DO-201AD and DO-15, and it should be mounted on a suitable heat sink for optimal performance.
8. What are the typical reverse recovery time and reverse recovery charge of the 1N6000B diode?
The typical reverse recovery time of the 1N6000B diode is 4 microseconds, and the typical reverse recovery charge is 10 nanocoulombs.
9. Can the 1N6000B diode be used in parallel for higher current applications, and if so, are there any considerations to keep in mind?
Yes, the 1N6000B diode can be used in parallel for higher current applications, but it's important to ensure proper current sharing and thermal management among the diodes.
10. Are there any specific application notes or guidelines for using the 1N6000B diode in power supply or rectification circuits?
When using the 1N6000B diode in power supply or rectification circuits, it's important to consider its forward voltage drop, reverse recovery characteristics, and thermal considerations to ensure reliable and efficient operation.
The maximum repetitive reverse voltage (VRRM) of the 1N6000B rectifier diode is 50 volts.
2. What is the average forward current (IF(AV)) rating of the 1N6000B diode at a specified temperature?
The average forward current (IF(AV)) rating of the 1N6000B diode is 3 amperes at a specified temperature.
3. Can the 1N6000B diode handle surge currents, and if so, what is the typical surge current rating?
Yes, the 1N6000B diode can handle surge currents, with a typical surge current rating of 100 amperes.
4. What is the maximum forward voltage drop (VF) across the 1N6000B diode under specified conditions?
The maximum forward voltage drop (VF) across the 1N6000B diode is 1 volt under specified conditions.
5. Is the 1N6000B diode suitable for high-frequency applications, and if so, what is its typical junction capacitance?
The 1N6000B diode is suitable for high-frequency applications, with a typical junction capacitance of 15 picofarads.
6. What is the operating temperature range of the 1N6000B diode?
The operating temperature range of the 1N6000B diode is -65°C to +175°C.
7. Does the 1N6000B diode have any special packaging or mounting requirements?
The 1N6000B diode is available in various packages such as DO-201AD and DO-15, and it should be mounted on a suitable heat sink for optimal performance.
8. What are the typical reverse recovery time and reverse recovery charge of the 1N6000B diode?
The typical reverse recovery time of the 1N6000B diode is 4 microseconds, and the typical reverse recovery charge is 10 nanocoulombs.
9. Can the 1N6000B diode be used in parallel for higher current applications, and if so, are there any considerations to keep in mind?
Yes, the 1N6000B diode can be used in parallel for higher current applications, but it's important to ensure proper current sharing and thermal management among the diodes.
10. Are there any specific application notes or guidelines for using the 1N6000B diode in power supply or rectification circuits?
When using the 1N6000B diode in power supply or rectification circuits, it's important to consider its forward voltage drop, reverse recovery characteristics, and thermal considerations to ensure reliable and efficient operation.
1N6000B Змяненні, ключавыя словы
:
1N6000B Кошт
1N6000B Малюнак
1N6000B Напружанне на выснове
Акцыі: Хуткая праверка каціровак
Мінімальная замова: 1
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