MT29F64G08CBCGBWP-BES:G TR Micron Technology Inc. IC FLASH MLC 64GBIT 8GX8 TSOP
Інтэгральныя схемы (ІС)
Нумар вытворцы:
MT29F64G08CBCGBWP-BES:G TR
Вытворца:
Катэгорыя прадукцыі:
Апісанне:
IC FLASH MLC 64GBIT 8GX8 TSOP
Стан RoHs:
Без свінцу / у адпаведнасці з RoHS Табліцы дадзеных:
Інтэрфейс памяці :
Parallel
Напружанне - сілкаванне :
2.7 V ~ 3.6 V
Пакет / Чахол :
-
Пакет прылады пастаўшчыка :
-
Памер памяці :
64Gb (8G x 8)
Працоўная тэмпература :
0°C ~ 70°C (TA)
серыял :
-
Тактавая частата :
-
Тып мацавання :
-
Тып памяці :
Non-Volatile
Тэхналогія :
FLASH - NAND
Ўпакоўка :
Tape & Reel (TR)
Фармат памяці :
Flash
Час доступу :
-
Час цыкла запісу - слова, старонка :
-
Частка Статус :
Active
в наличии
50,174
Unit Price:
Звяжыцеся з намі Прапанова
MT29F64G08CBCGBWP-BES:G TR Канкурэнтныя кошты
ChipIc мае унікальную крыніцу паставак. Мы можам прапанаваць MT29F64G08CBCGBWP-BES:G TR больш
канкурэнтаздольную цану для нашых кліентаў. Вы можаце атрымаць асалоду ад нашым лепшым
сэрвісам, купіўшы ChipIc MT29F64G08CBCGBWP-BES:G TR. Калі ласка, не саромейцеся звяртацца наконт
лепшай цаны на MT29F64G08CBCGBWP-BES:G TR. Націсніце, каб атрымаць прапанову
MT29F64G08CBCGBWP-BES:G TR Асаблівасці
MT29F64G08CBCGBWP-BES:G TR is produced by Micron Technology Inc., belongs to аб'ём памяці.
MT29F64G08CBCGBWP-BES:G TR Падрабязная інфармацыя аб прадукцыі
:
MT29F64G08CBCGBWP-BES:G TR - гэта аб'ём памяці, буферныя ўзмацняльнікі, распрацаваныя і
вырабленыя
Micron Technology Inc..
MT29F64G08CBCGBWP-BES:G TR вытворчасці Micron Technology Inc. можна набыць на сайце Chipic.
Тут вы можаце знайсці розныя віды электронных дэталяў ад вядучых вытворцаў свету.
MT29F64G08CBCGBWP-BES:G TR кампаніі Chipic прайшоў строгі кантроль якасці і адпавядае усім патрабаванням.
Статус запасаў, пазначаны на Chipic, прызначаны толькі для даведкі.
Калі вы не знайшлі запчастку, якую шукаеце, вы можаце звязацца з намі для атрымання дадатковай інфармацыі, такі як колькасць запасаў у табліцы дадзеных MT29F64G08CBCGBWP-BES:G TR (PDF), кошт MT29F64G08CBCGBWP-BES:G TR, Распіноўка MT29F64G08CBCGBWP-BES:G TR, кіраўніцтва MT29F64G08CBCGBWP-BES:G TR і рашэнне на замену MT29F64G08CBCGBWP-BES:G TR.
MT29F64G08CBCGBWP-BES:G TR вытворчасці Micron Technology Inc. можна набыць на сайце Chipic.
Тут вы можаце знайсці розныя віды электронных дэталяў ад вядучых вытворцаў свету.
MT29F64G08CBCGBWP-BES:G TR кампаніі Chipic прайшоў строгі кантроль якасці і адпавядае усім патрабаванням.
Статус запасаў, пазначаны на Chipic, прызначаны толькі для даведкі.
Калі вы не знайшлі запчастку, якую шукаеце, вы можаце звязацца з намі для атрымання дадатковай інфармацыі, такі як колькасць запасаў у табліцы дадзеных MT29F64G08CBCGBWP-BES:G TR (PDF), кошт MT29F64G08CBCGBWP-BES:G TR, Распіноўка MT29F64G08CBCGBWP-BES:G TR, кіраўніцтва MT29F64G08CBCGBWP-BES:G TR і рашэнне на замену MT29F64G08CBCGBWP-BES:G TR.
MT29F64G08CBCGBWP-BES:G TR FAQ
:
1. What is the maximum capacity of the MT29F64G08CBCGBWP-BES:G TR NAND flash memory?
The MT29F64G08CBCGBWP-BES:G TR NAND flash memory has a maximum capacity of 64 gigabits.
2. What interface does the MT29F64G08CBCGBWP-BES:G TR use for data transfer?
The MT29F64G08CBCGBWP-BES:G TR uses a standard NAND flash interface for data transfer.
3. Can the MT29F64G08CBCGBWP-BES:G TR operate at industrial temperature ranges?
Yes, the MT29F64G08CBCGBWP-BES:G TR is designed to operate at industrial temperature ranges.
4. What is the typical power consumption of the MT29F64G08CBCGBWP-BES:G TR during read and write operations?
The typical power consumption of the MT29F64G08CBCGBWP-BES:G TR during read and write operations is low, making it suitable for power-sensitive applications.
5. Does the MT29F64G08CBCGBWP-BES:G TR support hardware-based data protection features?
Yes, the MT29F64G08CBCGBWP-BES:G TR supports hardware-based data protection features to ensure data integrity and security.
6. What are the recommended operating voltage levels for the MT29F64G08CBCGBWP-BES:G TR?
The recommended operating voltage levels for the MT29F64G08CBCGBWP-BES:G TR are in line with industry standards for NAND flash memory devices.
7. Is the MT29F64G08CBCGBWP-BES:G TR compatible with commonly used NAND flash controllers?
Yes, the MT29F64G08CBCGBWP-BES:G TR is designed to be compatible with commonly used NAND flash controllers for ease of integration.
8. Can the MT29F64G08CBCGBWP-BES:G TR support high-speed data transfer rates?
Yes, the MT29F64G08CBCGBWP-BES:G TR is capable of supporting high-speed data transfer rates, making it suitable for demanding applications.
9. What are the typical endurance and retention characteristics of the MT29F64G08CBCGBWP-BES:G TR?
The MT29F64G08CBCGBWP-BES:G TR exhibits excellent endurance and retention characteristics, ensuring reliable long-term performance.
10. Are there any specific design considerations when using the MT29F64G08CBCGBWP-BES:G TR in embedded systems?
When using the MT29F64G08CBCGBWP-BES:G TR in embedded systems, it is important to consider proper thermal management and signal integrity to maximize its performance and lifespan.
The MT29F64G08CBCGBWP-BES:G TR NAND flash memory has a maximum capacity of 64 gigabits.
2. What interface does the MT29F64G08CBCGBWP-BES:G TR use for data transfer?
The MT29F64G08CBCGBWP-BES:G TR uses a standard NAND flash interface for data transfer.
3. Can the MT29F64G08CBCGBWP-BES:G TR operate at industrial temperature ranges?
Yes, the MT29F64G08CBCGBWP-BES:G TR is designed to operate at industrial temperature ranges.
4. What is the typical power consumption of the MT29F64G08CBCGBWP-BES:G TR during read and write operations?
The typical power consumption of the MT29F64G08CBCGBWP-BES:G TR during read and write operations is low, making it suitable for power-sensitive applications.
5. Does the MT29F64G08CBCGBWP-BES:G TR support hardware-based data protection features?
Yes, the MT29F64G08CBCGBWP-BES:G TR supports hardware-based data protection features to ensure data integrity and security.
6. What are the recommended operating voltage levels for the MT29F64G08CBCGBWP-BES:G TR?
The recommended operating voltage levels for the MT29F64G08CBCGBWP-BES:G TR are in line with industry standards for NAND flash memory devices.
7. Is the MT29F64G08CBCGBWP-BES:G TR compatible with commonly used NAND flash controllers?
Yes, the MT29F64G08CBCGBWP-BES:G TR is designed to be compatible with commonly used NAND flash controllers for ease of integration.
8. Can the MT29F64G08CBCGBWP-BES:G TR support high-speed data transfer rates?
Yes, the MT29F64G08CBCGBWP-BES:G TR is capable of supporting high-speed data transfer rates, making it suitable for demanding applications.
9. What are the typical endurance and retention characteristics of the MT29F64G08CBCGBWP-BES:G TR?
The MT29F64G08CBCGBWP-BES:G TR exhibits excellent endurance and retention characteristics, ensuring reliable long-term performance.
10. Are there any specific design considerations when using the MT29F64G08CBCGBWP-BES:G TR in embedded systems?
When using the MT29F64G08CBCGBWP-BES:G TR in embedded systems, it is important to consider proper thermal management and signal integrity to maximize its performance and lifespan.
MT29F64G08CBCGBWP-BES:G TR Змяненні, ключавыя словы
:
MT29F64G08CBCGBWP-BES:G TR Кошт
MT29F64G08CBCGBWP-BES:G TR Малюнак
MT29F64G08CBCGBWP-BES:G TR Напружанне на выснове
Акцыі: Хуткая праверка каціровак
Мінімальная замова: 1
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