S34ML01G200TFA000 Cypress Semiconductor Corp IC FLASH 1GBIT 25NS 48TSOP
Інтэгральныя схемы (ІС)
Нумар вытворцы:
S34ML01G200TFA000
Вытворца:
Катэгорыя прадукцыі:
Апісанне:
IC FLASH 1GBIT 25NS 48TSOP
Стан RoHs:
Без свінцу / у адпаведнасці з RoHS Табліцы дадзеных:
S34ML01G200TFA000 Табліцы дадзеных(PDF)
Інтэрфейс памяці :
Parallel
Напружанне - сілкаванне :
2.7 V ~ 3.6 V
Пакет / Чахол :
48-TFSOP (0.724", 18.40mm Width)
Пакет прылады пастаўшчыка :
48-TSOP I
Памер памяці :
1Gb (128M x 8)
Працоўная тэмпература :
-40°C ~ 85°C (TA)
серыял :
ML-2
Тактавая частата :
-
Тып мацавання :
Surface Mount
Тып памяці :
Non-Volatile
Тэхналогія :
FLASH - NAND
Ўпакоўка :
Tray
Фармат памяці :
Flash
Час доступу :
-
Час цыкла запісу - слова, старонка :
25ns
Частка Статус :
Active
в наличии
21,200
Unit Price:
Звяжыцеся з намі Прапанова
S34ML01G200TFA000 Канкурэнтныя кошты
ChipIc мае унікальную крыніцу паставак. Мы можам прапанаваць S34ML01G200TFA000 больш
канкурэнтаздольную цану для нашых кліентаў. Вы можаце атрымаць асалоду ад нашым лепшым
сэрвісам, купіўшы ChipIc S34ML01G200TFA000. Калі ласка, не саромейцеся звяртацца наконт
лепшай цаны на S34ML01G200TFA000. Націсніце, каб атрымаць прапанову
S34ML01G200TFA000 Асаблівасці
S34ML01G200TFA000 is produced by Cypress Semiconductor Corp, belongs to аб'ём памяці.
S34ML01G200TFA000 Падрабязная інфармацыя аб прадукцыі
:
S34ML01G200TFA000 - гэта аб'ём памяці, буферныя ўзмацняльнікі, распрацаваныя і
вырабленыя
Cypress Semiconductor Corp.
S34ML01G200TFA000 вытворчасці Cypress Semiconductor Corp можна набыць на сайце Chipic.
Тут вы можаце знайсці розныя віды электронных дэталяў ад вядучых вытворцаў свету.
S34ML01G200TFA000 кампаніі Chipic прайшоў строгі кантроль якасці і адпавядае усім патрабаванням.
Статус запасаў, пазначаны на Chipic, прызначаны толькі для даведкі.
Калі вы не знайшлі запчастку, якую шукаеце, вы можаце звязацца з намі для атрымання дадатковай інфармацыі, такі як колькасць запасаў у табліцы дадзеных S34ML01G200TFA000 (PDF), кошт S34ML01G200TFA000, Распіноўка S34ML01G200TFA000, кіраўніцтва S34ML01G200TFA000 і рашэнне на замену S34ML01G200TFA000.
S34ML01G200TFA000 вытворчасці Cypress Semiconductor Corp можна набыць на сайце Chipic.
Тут вы можаце знайсці розныя віды электронных дэталяў ад вядучых вытворцаў свету.
S34ML01G200TFA000 кампаніі Chipic прайшоў строгі кантроль якасці і адпавядае усім патрабаванням.
Статус запасаў, пазначаны на Chipic, прызначаны толькі для даведкі.
Калі вы не знайшлі запчастку, якую шукаеце, вы можаце звязацца з намі для атрымання дадатковай інфармацыі, такі як колькасць запасаў у табліцы дадзеных S34ML01G200TFA000 (PDF), кошт S34ML01G200TFA000, Распіноўка S34ML01G200TFA000, кіраўніцтва S34ML01G200TFA000 і рашэнне на замену S34ML01G200TFA000.
S34ML01G200TFA000 FAQ
:
1. What is the maximum capacity of the S34ML01G200TFA000 NAND flash memory?
The S34ML01G200TFA000 NAND flash memory has a maximum capacity of 1 Gb (Gigabit).
2. What interface does the S34ML01G200TFA000 support?
The S34ML01G200TFA000 supports a standard ONFI 2.3-compliant NAND interface.
3. What are the operating voltage ranges for the S34ML01G200TFA000?
The operating voltage range for the S34ML01G200TFA000 is typically 2.7V to 3.6V for read and program operations, and 1.65V to 3.6V for erase operations.
4. Can the S34ML01G200TFA000 perform high-speed data transfers?
Yes, the S34ML01G200TFA000 is capable of high-speed data transfers with its synchronous interface and advanced NAND flash memory management features.
5. What is the typical power consumption of the S34ML01G200TFA000 during read and program operations?
The typical power consumption of the S34ML01G200TFA000 during read and program operations is low, making it suitable for power-sensitive applications.
6. Does the S34ML01G200TFA000 incorporate error correction capabilities?
Yes, the S34ML01G200TFA000 incorporates advanced error correction capabilities to ensure data integrity and reliability.
7. Is the S34ML01G200TFA000 designed for industrial temperature ranges?
Yes, the S34ML01G200TFA000 is designed to operate reliably within industrial temperature ranges, making it suitable for rugged environments.
8. Can the S34ML01G200TFA000 support multiple plane operations?
Yes, the S34ML01G200TFA000 supports multiple plane operations, enabling efficient parallelism for improved performance.
9. What are the typical endurance and retention characteristics of the S34ML01G200TFA000?
The S34ML01G200TFA000 offers high endurance and reliable data retention, meeting the demands of various storage applications.
10. Does the S34ML01G200TFA000 incorporate built-in wear-leveling algorithms?
Yes, the S34ML01G200TFA000 incorporates built-in wear-leveling algorithms to distribute write and erase cycles evenly across the memory cells, extending its lifespan.
I hope this information is helpful. Let me know if you need further assistance.
The S34ML01G200TFA000 NAND flash memory has a maximum capacity of 1 Gb (Gigabit).
2. What interface does the S34ML01G200TFA000 support?
The S34ML01G200TFA000 supports a standard ONFI 2.3-compliant NAND interface.
3. What are the operating voltage ranges for the S34ML01G200TFA000?
The operating voltage range for the S34ML01G200TFA000 is typically 2.7V to 3.6V for read and program operations, and 1.65V to 3.6V for erase operations.
4. Can the S34ML01G200TFA000 perform high-speed data transfers?
Yes, the S34ML01G200TFA000 is capable of high-speed data transfers with its synchronous interface and advanced NAND flash memory management features.
5. What is the typical power consumption of the S34ML01G200TFA000 during read and program operations?
The typical power consumption of the S34ML01G200TFA000 during read and program operations is low, making it suitable for power-sensitive applications.
6. Does the S34ML01G200TFA000 incorporate error correction capabilities?
Yes, the S34ML01G200TFA000 incorporates advanced error correction capabilities to ensure data integrity and reliability.
7. Is the S34ML01G200TFA000 designed for industrial temperature ranges?
Yes, the S34ML01G200TFA000 is designed to operate reliably within industrial temperature ranges, making it suitable for rugged environments.
8. Can the S34ML01G200TFA000 support multiple plane operations?
Yes, the S34ML01G200TFA000 supports multiple plane operations, enabling efficient parallelism for improved performance.
9. What are the typical endurance and retention characteristics of the S34ML01G200TFA000?
The S34ML01G200TFA000 offers high endurance and reliable data retention, meeting the demands of various storage applications.
10. Does the S34ML01G200TFA000 incorporate built-in wear-leveling algorithms?
Yes, the S34ML01G200TFA000 incorporates built-in wear-leveling algorithms to distribute write and erase cycles evenly across the memory cells, extending its lifespan.
I hope this information is helpful. Let me know if you need further assistance.
S34ML01G200TFA000 Змяненні, ключавыя словы
:
S34ML01G200TFA000 Кошт
S34ML01G200TFA000 Малюнак
S34ML01G200TFA000 Напружанне на выснове
Акцыі: Хуткая праверка каціровак
Мінімальная замова: 1
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